Achieving high-level DLC film deposition with proprietary sputtering technology!
DLC film formation (film quality: ta-C domain, surface roughness Ra 0.16 nm, transmittance: 88%) achieved through sputtering, which has had many challenges in the past.
The RAM CATHODE (four-sided opposing cathode) dramatically improves the ionization rate, enabling the formation of DLC (ta-C) using a DC pulse power supply without the need for HIPIMS power. 【Conventional Sputtering Method】 Due to the low ionization rate of carbon, it was necessary to use HIPIMS power to forcibly increase the ionization rate in order to obtain the ta-C region. 【RAM Cathode Developed by Our Company】 By arranging targets on four opposing sides, the magnetic field between the targets enhances plasma confinement, allowing for the formation of high-density plasma. Within the confined plasma, electrons, rebounding argon, and C flux repeatedly collide, promoting the ionization of Ar ions and C flux, which facilitates the easy formation of C-C bonds in the DLC film. As a result, we have achieved the formation of high-hardness and high-smoothness DLC without using HIPIMS power. *For more details, please refer to the PDF document or feel free to contact us.
